Organic light emitting diode display device and manufacturing method thereof

ABSTRACT

An organic light emitting diode display device and a manufacturing method thereof are provided. The organic light emitting diode display device includes a first flexible substrate, a second flexible substrate, a first barrier layer, a second barrier layer, an organic light emitting diode element, and a metal enclosing wall. The first barrier layer is disposed on the first flexible substrate, and the second barrier layer is disposed on the second flexible substrate. The organic light emitting diode element is disposed between the first barrier layer and the second barrier layer. The metal enclosing wall connects the first flexible substrate to the second flexible substrate and surrounds the organic light emitting diode element.

This application is a continuation application of U.S. application Ser.No. 14/165,617, filed Jan. 28, 2014, which claims the benefit of Taiwanapplication Ser. No. 102105491, filed Feb. 18, 2013, the subject matterof which is incorporated herein by reference.

BACKGROUND

1. Technical Field

The disclosure relates in general to an organic light emitting diodedisplay device and a manufacturing method thereof, and particularly toan organic light emitting diode display device with superiorwater-oxygen resistant abilities and a manufacturing method thereof.

2. Description of the Related Art

Along with the progress of display technology, various types of displaydevices have been developed, among which organic light emitting diodedisplay devices have become one of the most important research targetsof display technology. Therefore, the development and design ofarranging organic light emitting diodes in flexible display devices haveadvanced rapidly as well.

However, organic light emitting diodes are vulnerable to the oxidationby water (moisture) and oxygen, and thus the operating functions thereofare influenced. On the other hand, despite having superior water-oxygenresistant abilities, frits are rarely adopted as barrier structures dueto the difficulties of frits conforming to the requirements offlexibility of display devices. In view of that, the research anddevelopment of the resistance to water and oxygen for flexible organiclight emitting diode display devices have become a huge challenge.Therefore, researchers have been working on providing flexible organiclight emitting diode display devices with superior water-oxygenresistant abilities.

SUMMARY

The disclosure relates to an organic light emitting diode display deviceand a manufacturing method thereof. In the organic light emitting diodedisplay device, a metal enclosing wall connects two flexible substratesand surrounds the organic light emitting diode element to form a lateralbarrier structure to prevent water and oxygen penetration, together withthe barrier layers disposed above and below the organic light emittingdiode element, respectively, the water-oxygen resistant abilities of thewhole display device can be significantly increased.

According to an aspect of the present disclosure, an organic lightemitting diode (OLED) display device is provided. The organic lightemitting diode display device comprises a first flexible substrate, asecond flexible substrate, a first barrier layer, a second barrierlayer, an organic light emitting diode element, and a metal enclosingwall. The first barrier layer is disposed on the first flexiblesubstrate, and the second barrier layer is disposed on the secondflexible substrate. The organic light emitting diode element is disposedbetween the first barrier layer and the second barrier layer. The metalenclosing wall connects the first flexible substrate to the secondflexible substrate and surrounds the organic light emitting diodeelement.

According to another aspect of the present disclosure, a manufacturingmethod of an organic light emitting diode display device is provided.The manufacturing method includes the following steps:

providing a first flexible substrate and a second flexible substrate;disposing a first barrier layer on the first flexible substrate;disposing a second barrier layer on the second flexible substrate;disposing an organic light emitting diode element on the first flexiblesubstrate; forming a first patterned metal layer on the first flexiblesubstrate and forming a second patterned metal layer on the secondflexible substrate; assembling the first flexible substrate to thesecond flexible substrate; and heating the first patterned metal layerand the second patterned layer to form a metal enclosing wall, the metalenclosing wall connecting the first flexible substrate to the secondflexible substrate and surrounding the organic light emitting diodeelement.

According to a further aspect of the present disclosure, a manufacturingmethod of an organic light emitting diode display device is provided.The manufacturing method includes the following steps: providing a firstflexible substrate and a second flexible substrate; disposing a firstbarrier layer on the first flexible substrate; disposing a secondbarrier layer on the second flexible substrate; disposing an organiclight emitting diode element on the first flexible substrate; forming afirst metal layer on the first flexible substrate and forming a secondmetal layer on the second flexible substrate; forming a third metallayer between the first metal layer and the second metal layer, whereinthe material of the third metal layer is different from the materials ofthe first metal layer and the second metal layer; providing a fillercovering the organic light emitting diode element; assembling the firstflexible substrate to the second flexible substrate; and heating thefirst metal layer, the second metal layer, and the third metal layer toform a metal enclosing wall, the metal enclosing wall connecting thefirst flexible substrate to the second flexible substrate andsurrounding the organic light emitting diode element.

The above and other aspects of the disclosure will become betterunderstood with regard to the following detailed description of thenon-limiting embodiment(s). The following description is made withreference to the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A shows a schematic diagram of the organic light emitting displaydevice according to an embodiment of the present disclosure;

FIG. 1B shows a cross-sectional view along the section line 1B-1B′ inFIG. 1A;

FIG. 2 shows a schematic diagram of the organic light emitting displaydevice according to another embodiment of the present disclosure;

FIG. 3 shows a schematic diagram of the organic light emitting displaydevice according to a further embodiment of the present disclosure;

FIGS. 4A-4F illustrate a process for manufacturing an organic lightemitting diode display device according to an embodiment of the presentdisclosure; and

FIGS. 5A-5D illustrate a process for manufacturing an organic lightemitting diode display device according to another embodiment of thepresent disclosure.

DETAILED DESCRIPTION

In the embodiments of the present disclosure, an organic light emittingdiode display device and a manufacturing method thereof are provided. Inthe organic light emitting diode display device, a metal enclosing wallconnects two flexible substrates and surrounds the organic lightemitting diode element to form a lateral barrier structure to preventwater and oxygen penetration, together with the barrier layers disposedabove and below the organic light emitting diode element, respectively,the water-oxygen resistant abilities of the whole display device can besignificantly increased. The following embodiments are for the purposeof elaboration only, not for limiting the scope of protection of thedisclosure. Detailed structures and processes may be modified or changedby one skilled in the art after having the benefit of this descriptionof the disclosure.

Referring to FIGS. 1A-1B, FIG. 1A shows a schematic diagram of theorganic light emitting display device 100 according to an embodiment ofthe present disclosure, and FIG. 1B shows a cross-sectional view alongthe section line 1B-1B′ in FIG. 1A. As shown in FIGS. 1A-1B, the organiclight emitting diode display device 100 comprises a first flexiblesubstrate 110, a first barrier layer 120, a second flexible substrate130, a second barrier layer 140, an organic light emitting diode element150, and a metal enclosing wall 160. The first barrier layer 120 isdisposed on the first flexible substrate 110, and the second barrierlayer 140 is disposed on the second flexible substrate 130. The organiclight emitting diode element 150 is disposed between the first barrierlayer 120 and the second barrier layer 140. The metal enclosing wall 160connects the first flexible substrate 110 to the second flexiblesubstrate 130 and surrounds the organic light emitting diode element150, such that the organic light emitting diode element 150 can besealed between the first flexible substrate 110 and the second flexiblesubstrate 130.

As shown in FIG. 1A, the second flexible substrate 130 is assembled tothe first flexible substrate 110, and the metal enclosing wall 160surrounds the organic light emitting diode element 150 to form a lateralbarrier structure to prevent water and oxygen penetration. With themetal enclosing wall 160 together with the first barrier layer 120 belowthe organic light emitting diode element 150 and the second barrierlayer 140 above the organic light emitting diode element 150, the wholedisplay device is provided with an excellent water-oxygen resistantability with a water vapor transmission rate (WVTR) of 10⁻⁶.

As shown in FIG. 1B, the metal enclosing wall 160 may have amicrostructure (not shown) formed on the surface 160 b thereof connectedto the first flexible substrate 110, and the metal enclosing wall 160may further have a microstructure (not shown) formed on the surface 160a thereof connected to the second flexible substrate 130. Themicrostructure(s) are such as roughened surfaces. Due to the differencesin the thermal expansion coefficients between layers, the holding stressbetween layers may result in peeling of layers; and in view of that, themicrostructure(s) can compensate the stress and prevent the layers frompeeling. In addition, the microstructure(s) may increase the connectionbetween the metal enclosing wall 160 and the flexible substrates 110 and130 as well, and the water-oxygen resistant effect can be furtherimproved. Furthermore, the microstructure(s) formed on the connectionsurfaces between adjacent layers can prolong the penetration paths forwater and oxygen, which can further improve the water-oxygen resistanteffect as well.

In the embodiment, the material of the metal enclosing wall 160 mayinclude a metal with a low melting point or a solid solution metal. Inthe embodiment, the metal with a low melting point is such as tin (Sn).In the embodiment, the solid solution metal is such as tin-gold (SnAu)alloy, tin-nickel (SnNi) alloy, tin-antimony (SnSb) alloy, tin-lead(SnPb) alloy, tin-bismuth (SnBi) alloy, and/or tin-copper (SnCu) alloy.These alloys have alloy phases formed by dissolving solute atoms intolattices of metal solvents at set ratios of the solute atoms to themetal solvents. The elements from the solute and from the solvent aremiscible in both liquid phase and solid phase, forming a uniformmaterial. In one embodiment, the tin-lead (SnPb) alloy includes such as63% atomic ratio of tin and 37% atomic ratio of lead, and the meltingpoint of the alloy is 183° C.

In the embodiment, the materials of the first flexible substrate 110 andthe second flexible substrate 130 are retractable thin transparentsubstrates, such as polyimide (PI), and of which the thicknesses areabout 10-15 μm. In the embodiment, the first barrier layer 120 and thesecond barrier layer 140 are independently silicon nitride (SiN) orstacked layers of silicon nitride and silicon oxide (SiN_(x)/SiO_(x)),and both have water-oxygen resistant abilities.

As shown in FIG. 1B, the organic light emitting diode display device 100may further include a third barrier layer 170, and the third barrierlayer 170 is formed on and covering the organic light emitting diodeelement 150.

The third barrier layer 170 is provided with water-oxygen resistantabilities, which is advantageous to preventing the organic lightemitting diode element 150 from being oxidized by water and oxygen. Thethird barrier layer 170 is such as a silicon nitride layer or stackedlayers of silicon nitride and silicon oxide.

As shown in FIG. 1B, the organic light emitting diode display device 100may further include a filler 180. The filler 180 is filled inside themetal enclosing wall 160 and covering the organic light emitting diodeelement 150.

The organic light emitting diode display device 100 may further includea color filter 191 and/or a thin film transistor layer 193. In oneembodiment, as shown in FIG. 1B, the organic light emitting diodeelement 150 is such as a white light organic light emitting diode, thecolor filter 191 is disposed between the second flexible substrate 130and the organic light emitting diode 150, and the thin film transistorlayer 193 is disposed between the first flexible substrate 110 and theorganic light emitting diode element 150. In an alternative embodiment,the organic light emitting diode element 150 is such as a RGB organiclight emitting diode, and in such case, a color filter is not requiredto be disposed between the second flexible substrate 130 and the organiclight emitting diode element 150.

Referring to FIG. 2, FIG. 2 shows a schematic diagram of the organiclight emitting display device 200 according to another embodiment of thepresent disclosure. As shown in FIG. 2, the present embodiment and theembodiment as shown in FIGS. 1A-1B are different in that, in the organiclight emitting diode display device 200, the metal enclosing wall 260further includes a first metal layer 261, a second metal layer 263, anda third metal layer 265. The first metal layer 261 is connected to thefirst flexible substrate 110, the second metal layer 263 is connected tothe second flexible substrate 130, and the third metal layer 265 isformed between the first metal layer 261 and the second metal layer 263.In the embodiment, the materials of the first metal layer 261 and thesecond metal layer 263 may be the same or different from each other. Thematerial of the third metal layer 265 is different from the materials ofthe first metal layer 261 and the second metal layer 263. The elementsin the present embodiment sharing the same labels with those in theprevious embodiment are the same elements, and the description of whichis omitted.

As shown in FIG. 2, the interface 262 between the first metal layer 261and the third metal layer 265 may have a microstructure (not shown)formed thereon, and the interface 264 between the second metal layer 263and the third metal layer 265 may have a microstructure (not shown)formed thereon as well. The microstructures can increase the connectionbetween the first metal layer 261, the second metal layer 263, and thethird metal layer 265, contributing to forming the continuous wallstructure of the metal enclosing wall 260. In other words, in thestructure of the metal enclosing wall 260, the joint surfaces betweenthe first metal layer 261, the second metal layer 263, and the thirdmetal layer 265 can be regarded as not existed; accordingly, the overallwater-oxygen resistant ability is greatly improved.

In the embodiment, the thickness of the first metal layer 261 and thethickness of the second metal layer 263 are such as 300-1000 nm.

In the embodiment, the materials of the first metal layer 261 and thesecond metal layer 263 may include at least a conductive metal commonlyused in general manufacturing processes, such as aluminum (Al),molybdenum (Mo), or aluminum-niobium (AlNb) alloy. In the embodiment,the materials of the first metal layer 261 and the second metal layer263 may include a metal with a low melting point or a solid solutionmetal. The metal with a low melting point is such as tin (Sn). The solidsolution metal is such as tin-gold (SnAu) alloy, tin-nickel (SnNi)alloy, tin-antimony (SnSb) alloy, tin-lead (SnPb) alloy, tin-bismuth(SnBi) alloy, and/or tin-copper (SnCu) alloy. These alloys have alloyphases formed by dissolving solute atoms into lattices of metal solventsat set ratios of the solute atoms to the metal solvents. The elementsfrom the solute and from the solvent are miscible in both liquid phaseand solid phase, forming a uniform material. In one embodiment, thetin-lead (SnPb) alloy includes such as 63% atomic ratio of tin and 37%atomic ratio of lead, and the melting point of the alloy is 183° C. Inthe embodiment, the material of the third metal layer 265 comprises suchas an organic-inorganic mixture material, the organic-inorganic mixturematerial comprising an organic material portion and an inorganicmaterial portion. The organic material portion may comprise waterresistant colloid, such as epoxy or silicone; the inorganic materialportion may comprise a metal with a low melting point or a solidsolution metal. The metal with a low melting point is such as tin. Thesolid solution metal is such as tin-gold (SnAu) alloy, tin-nickel (SnNi)alloy, tin-antimony (SnSb) alloy, tin-lead (SnPb) alloy, tin-bismuth(SnBi) alloy, and/or tin-copper (SnCu) alloy.

In the embodiment, the metal enclosing wall 260 is formed by such asimpregnating and uniformly distributing metal micro-particles in a rawmaterial (e.g. colloidal material), followed by melting the metalmicro-particles by such as a thermal-pressing process or a microwaveprocess to form continuous interfaces after assembling, as such abarrier having an organic/inorganic multi-layered structure is formed.The high homogeneity between the materials of the first metal layer 261,the second metal layer 263, and the third metal layer 265 isadvantageous to forming the continuous wall structure of the metalenclosing wall 260 in the subsequent processes, by applying heat andpressure.

Referring to FIG. 3, FIG. 3 shows a schematic diagram of the organiclight emitting display device 300 according to a further embodiment ofthe present disclosure. The metal enclosing wall 260 of the embodimentas shown in FIG. 2 is taken as an example for illustrating the presentembodiment but not limited thereto; the metal enclosing wall 160 of theembodiment as shown in FIG. 1 may apply in the present embodiment aswell. The elements in the present embodiment sharing the same labelswith those in the previous embodiments are the same elements, and thedescription of which is omitted.

As shown in FIG. 3, the organic light emitting diode display device 300may further include an IC component 310 or a flexible cable 320. Theorganic light emitting diode display device 300 may include both the ICcomponent 310 and the flexible cable 320 as well. The IC component 310and the flexible cable 320 are bonded to the first flexible substrate110. As shown in FIG. 3, the flexible cable 320 is bonded to the firstflexible substrate 110 with the solder pad 330. In other words, the ICcomponent 310 and the flexible cable 320 are electrically connected tothe organic light emitting diode element 150 and/or the thin filmtransistor layer 193 with the first flexible substrate 110.

As shown in FIG. 3, the organic light emitting diode display device 300may further include an encapsulating glue 340. The encapsulating glue340 is formed on the first flexible substrate 110. In the embodiment,the encapsulating glue 340 is water-oxygen resistant. In the embodiment,as shown in FIG. 3, the size of the second flexible substrate 130 issmaller than the size of the first flexible substrate 110, and theencapsulating glue 340 covers the first flexible substrate 110, thesecond flexible substrate 130, and the metal enclosing wall 260. In theembodiment, the top surface of the encapsulating glue 340 is such asplanar, which is advantageous to the formation of additional films onthe encapsulating glue 340 in the subsequent manufacturing processes.

As shown in FIG. 3, the organic light emitting diode display device 300may further include a first functional film 350 and/or a secondfunctional film 360. The encapsulating glue 340 is provided with asufficient adhesive ability for the first functional film 350 to beadhered directly on the encapsulating glue 340 without requiring anyadditional adhesive layers. In the embodiment, the thickness of thefirst functional film 350 is about 200-300 μm. The second functionalfilm 360 is disposed below the first flexible substrate 110; in theembodiment, the thickness of the second functional film 360 is lowerthan the thickness of the first functional film 350. In the embodiment,the first functional film 350 and the second functional film 360 aresuch as transparent water-oxygen resistant films, and of which thematerials are such as poly methyl methacrylate (PMMA), polyethyleneterephthalate (PET), or polycarbonate (PC).

The embodiments disclosed below are for elaborating a manufacturingmethod of the organic light emitting diode display device of thedisclosure. However, the descriptions disclosed in the embodiments ofthe disclosure such as detailed manufacturing procedures are forillustration only, not for limiting the scope of protection of thedisclosure. People having ordinary skills in the art may modify orchange the steps disclosed in the embodiments according actual needs.Referring to FIGS. 4A-4F, a process for manufacturing an organic lightemitting diode display device according to an embodiment of the presentdisclosure is illustrated.

As shown in FIG. 4A, a rigid carrier 410 is provided, and the firstflexible substrate 110 and the second flexible substrate 130 areprovided. The first flexible substrate 110 is such as formed on therigid carrier 410. In the embodiment, the material of the rigid carrier410 is such as stainless steel or glass.

As shown in FIG. 4A, next, the first barrier layer 120 is disposed onthe first flexible substrate 110, the second barrier layer 140 isdisposed on the second flexible substrate 130, and the organic lightemitting diode element 150 is disposed on the first flexible substrate110.

As shown in FIG. 4A, the thin film transistor layer 193 may be furtherdisposed between the organic light emitting diode element 150 and thefirst barrier layer 120, and the third barrier layer 170 may be furtherdisposed on the organic light emitting diode element 150 and coveringthe organic light emitting diode element 150. The third barrier layer170 may further protect the organic light emitting diode element 150from damage by water and oxygen, particularly in the subsequentmanufacturing processes of filling liquid or colloidal filler. In theembodiment, when a white organic light emitting diode is adopted as theorganic light emitting diode element 150, the color filter 191 mayfurther be disposed between the second barrier layer 140 and the secondflexible substrate 130.

As shown in FIG. 4B, the first metal layer 261 is formed on the firstflexible substrate 110, and the second metal layer 263 is formed on thesecond flexible substrate 130. Next, the third metal layer 265 is formedbetween the first metal layer 261 and the second metal layer 263,wherein the material of the third metal layer 265 is different from thematerials of the first metal layer 261 and the second metal layer 263.In the embodiment, as shown in FIG. 4B, the third metal layer 265 issuch as formed on the first metal layer 261.

In the embodiment, prior to the formation of the first metal layer 261and the second metal layer 263, microstructures may be formed on thesurfaces on which the metal layers 261 and 263 are predetermined to beformed. In the embodiment, prior to the formation of the third metallayer 265, microstructures may also be formed on the predeterminedinterfaces between the first metal layer 261, the second metal layer263, and the third metal layer 265. In the embodiment, microstructuresare formed on local regions of the surfaces of the first barrier layer120 and the second barrier layer 140 where the metal layers 261 and 263are predetermined to be formed on, as well as on the surfaces of thefirst metal layer 261 and the second metal layer 263. As such, the metalraw materials of the metal layers 261 and 263 may penetrate through thepores of the microstructures on the interfaces between layers moreeasily, rendering the formation of more compact structures on theinterfaces between the metal layers 261, 263 and the barrier layers 120,140. Accordingly, the chances that penetration and diffusion of waterand/or oxygen through the bottom of the metal enclosing wall 260 intoinside the device are reduced, leading to the metal enclosing wall(lateral water-oxygen barrier structure) having excellent water-oxygenresistant abilities. Likewise, the microstructures make the structuresof the interfaces between the first metal layer 261, the second metallayer 263, and third metal layer 265 more compact, which facilitates theformation of the seamless wall structure of the metal enclosing wall260, leading to the metal enclosing wall (lateral water-oxygen barrierstructure) having excellent water-oxygen resistant abilities.

In the embodiment, the first metal layer 261 and the second metal layer263 are formed by such as opening a mask and performing a sputteringprocess. Compared to conventional processes of forming frits of plasticmaterials, which have high viscosity and suffer from a higher difficultyin penetrating through the pores on the interfaces between layers, inthe embodiments of the present disclosure, the first metal layer 261 andthe second metal layer 263 are formed by a gas sputtering process, andthe raw materials of the metal layers are delivered to form the metallayers 261 and 263 in a layer by layer fashion, such that the liquefiedmetal materials, which are formed after being heated and melted, canpenetrate though the pores of the interfaces between the layers moreeasily, leading to more compact structures of the first metal layer 261and the second metal layer 263. Accordingly, the chances of thepenetration and diffusion of water or oxygen from the lateral side ofthe package into the device are reduced, and defects are not formed onthe bottom of the metal enclosing wall (lateral water-oxygen barrierstructure). However, as long as the patterns of the first metal layer261 and the second metal layer 263 can be formed, the selections ofmanufacturing methods of the metal layers 261 and 263 may vary accordingto actual needs and are not limited thereto. In the embodiment, thethird metal layer 265 is formed of a solder particle mixture materialwith high viscosity, and the third metal layer 265 is formed by, forexample, coating a highly-viscous solder particle mixture material onthe first metal layer 261. The third metal layer 265 having a fixedmorphology formed on the first metal layer 261 is advantageous torestricting and preventing the liquefied or colloidal filler fromoverflowing outside the substrates.

Next, the filler 180 is provided for covering the organic light emittingdiode element 150. In the embodiment, the liquefied or colloidal filler180 is provided to fill inside the range enclosed by the third metallayer 265. In the embodiment, a moisture absorbent may be further addedinto the filler 180 or coated on the inner walls of the first metallayer 261 and the third metal layer 265. The filler 180, either with amoisture absorbent added therein or not, may further absorb the residualmoisture around the organic light emitting diode element 150 remainedduring the manufacturing processes.

As shown in FIG. 4C, the first flexible substrate 110 is assembled tothe second flexible substrate 130, and the first metal layer 261, thesecond metal layer 263, and the third metal layer 265 are heated to formthe metal enclosing wall 260. The metal enclosing wall 260 connects thefirst flexible substrate 110 to the second flexible substrate 130 andsurrounds the organic light emitting diode element 150, such that theorganic light emitting diode element 150 is nicely sealed between thefirst flexible substrate 110 and the second flexible substrate 130.

In the embodiment, prior to heating the metal layers 261, 263, and 265,the filler 180 is solidified for turning it from liquefied or colloidalmaterial to a solid material. The filler 180 is solidified before themetal layers 261, 263, and 265 are heated, such that as the metal layers261, 263, and 265 are heated and melted, the solid filler 180 canprevent the liquefied metal layers 261, 263, and 265 from overflowingtoward the visible area of the display device. In the embodiment, amoisture absorbent may further be added onto the surface of the filler180.

In the embodiment, the heating treatment is performed locally on theregions where the first metal layer 261, the second metal layer 263, andthe third metal layer 265 are located. While the regions are beingheated, a pressure is applied to the same regions simultaneously aswell; for example, as shown in FIG. 4C, the regions are heated andpressed along the direction indicated by the arrow R. In the embodiment,the materials of the first metal layer 261, the second metal layer 263,and the third metal layer 265 have a high homogeneity, such that thefirst metal layer 261, the second metal layer 263, and the third metallayer 265 can form the metal enclosing wall 260 having a continuous wallstructure after being heated and pressed, and hence a more compactstructure is manufactured, providing a superior water-oxygen resistanteffect. In the embodiment, the first metal layer 261 and the secondmetal layer 263 are formed of a conductive metal commonly used ingeneral manufacturing processes, such as aluminum (Al), molybdenum (Mo),or aluminum-niobium (AlNb) alloy. In the embodiment, the materials ofthe first metal layer 261 and the second metal layer 263 may include ametal with a low melting point or a solid solution metal. The metal witha low melting point is such as tin (Sn). The solid solution metal issuch as tin-gold (SnAu) alloy, tin-nickel (SnNi) alloy, tin-antimony(SnSb) alloy, tin-lead (SnPb) alloy, tin-bismuth (SnBi) alloy, and/ortin-copper (SnCu) alloy. These alloys have alloy phases formed bydissolving solute atoms into lattices of metal solvents at set ratios ofthe solute atoms to the metal solvents. The elements from the solute andfrom the solvent are miscible in both liquid phase and solid phase,forming a uniform material. In one embodiment, the tin-lead (SnPb) alloyincludes such as 63% atomic ratio of tin and 37% atomic ratio of lead,and the melting point of the alloy is 183° C. In the embodiment, thematerial of the third metal layer 265 may comprise an organic-inorganicmixture material, the organic-inorganic mixture material comprising anorganic material portion and an inorganic material portion. The organicmaterial portion may comprise a water resistant colloid, such as anepoxy resin or a silicone. The inorganic material portion may comprise ametal with a low melting point or a solid solution metal, the metal witha low melting point is such as tin, and the solid solution metal may betin-gold (SnAu) alloy, tin-nickel (SnNi) alloy, tin-antimony (SnSb)alloy, tin-lead (SnPb) alloy, tin-bismuth (SnBi) alloy, and/ortin-copper (SnCu) alloy.

In the embodiment, the manufacturing method of the metal enclosing wall260 includes, such as, impregnating and uniformly distributing metalmicro-particles into a raw material (e.g. colloidal material), followedby manufacturing processes, such as a thermal-pressing process or amicrowave process, to melt the metal micro-particles and form acontinuous interface after assembling, for forming a barrier with anorganic/inorganic multilayered structure. In the embodiment, the firstmetal layer 261, the second metal layer 263, and the third metal layer265 are heated at a temperature of lower than 230° C. and pressed at apressure of lower than 2 MPa. In one embodiment, the first metal layer261, the second metal layer 263, and the third metal layer 265 areheated at 180° C. and pressed at 1 MPa for about 10 seconds. However,the conditions of the heating and pressing treatments and of which thetime durations may vary depending the actual applications and are notlimited thereto, as long as the properties of the already-formedelements are not influenced (e.g. when the temperature is too high, theelements or the flexible substrates may be damaged, or the layers maypeel), and the metal layers 261, 263, and 265 can melt and form themetal enclosing wall 260 having a continuous wall structure.

As shown in FIG. 4D, the IC component 310 and the flexible cable 320 mayfurther be disposed to bond to the first flexible substrate 110. Theflexible cable 320 is bonded to the first flexible substrate 110 withthe solder pad 330.

As shown in FIG. 4E, the encapsulating glue 340 may further be formed onthe first flexible substrate 110. After the encapsulating glue 340 iscoated on the first flexible substrate 110, the first functional film350 may be further adhered to the encapsulating glue 340. The firstfunctional film 350 is water-oxygen resistant, and the thickness of thefirst functional film 350 is about 200-300 μm; such thickness makes thefirst functional film 350 have a higher rigidity compared to the firstflexible substrate 110 and the second flexible substrate 130, such thatthe first functional film 350 can provide a sufficient support for thedevice after the rigid carrier 410 is removed later, and the wholestructure does not bend due to the lack of support, facilitating theproceedings of other subsequent processes (e.g. adhesion of the secondfunctional film 360).

As shown in FIG. 4F, the rigid carrier 410 may be further removed.

Next, the second functional film 360 may be adhered below the secondflexible substrate 130. As such, the organic light emitting diodedisplay device 300 as shown in FIG. 4F (FIG. 3) is formed.

FIGS. 5A-5D illustrate a process for manufacturing an organic lightemitting diode display device according to another embodiment of thepresent disclosure. Please refer to FIGS. 5A-5D and FIGS. 4D-4F.

As shown in FIG. 5A, the rigid carrier 410 is provided, and the firstflexible substrate 110 is formed on the rigid carrier 410. Next, thefirst barrier layer 120 and the second barrier layer 140 are formed onthe first flexible substrate 110 and the second flexible substrate 130,respectively, and the organic light emitting diode element 150 is formedon the first flexible substrate 110. Next, the third barrier layer 170,the thin film transistor layer 193, and/or the color filter 191 may befurther disposed.

As shown in FIG. 5B, the first patterned metal layer 561 is formed onthe first flexible substrate 110, and the second patterned metal layer563 is formed on the second flexible substrate 130. The materials of thefirst patterned metal layer 561 and the second patterned metal layer 563are the same. In the embodiment, prior to the formation of the firstpatterned metal layer 561 and the second patterned metal layer 563,microstructures may be formed on the surfaces where the metal layers 561and 563 are predetermined to be formed on, such that the later-formedmetal enclosing wall (lateral water-oxygen resistant structure) can beprovided with superior water-oxygen resistant abilities.

In the embodiment, the first patterned metal layer 561 and the secondpatterned metal layer 563 are formed by such as opening a mask andperforming a sputtering process. In the embodiment, the thickness of thefirst patterned metal layer 561 and the thickness of the secondpatterned metal layer 563 are about 4-5 μm.

As shown in FIG. 5C, the first flexible substrate 110 is assembled tothe second flexible substrate 130, and the first patterned metal layer561 and the second patterned metal layer 563 are heated to form themetal enclosing wall 160. The metal enclosing wall 160 connects thefirst flexible substrate 110 to the second flexible substrate 130 andsurrounds the organic light emitting diode element 150, such that theorganic light emitting diode element 150 is nicely sealed between thefirst flexible substrate 110 and the second flexible substrate 130. Inthe embodiment, prior to assembling the substrates, the filler 180 isfurther provided to cover the organic light emitting diode element 150.

In the embodiment, the heating treatment is performed locally on theregions where the first patterned metal layer 561 and the secondpatterned metal layer 563 are located. While the regions are beingheated, a pressure is applied to the same regions simultaneously aswell; for example, as shown in FIG. 5C, the regions are heated andpressed along the direction indicated by the arrow R. In the embodiment,the materials of the first patterned metal layer 561 and the secondpatterned metal layer 563 are the same, such that the first patternedmetal layer 561 and the second patterned metal layer 563 can form themetal enclosing wall 160 having a continuous wall structure after beingheated and pressed, and hence a more compact structure is manufactured,providing a superior water-oxygen resistant effect. In the embodiment,the materials of the first patterned metal layer 561 and the secondpatterned metal layer 563 may include a metal with a low melting pointor a solid solution metal. The metal with a low melting point is such astin (Sn). The solid solution metal is such as tin-gold (SnAu) alloy,tin-nickel (SnNi) alloy, tin-antimony (SnSb) alloy, tin-lead (SnPb)alloy, tin-bismuth (SnBi) alloy, and/or tin-copper (SnCu) alloy. Thesealloys have alloy phases formed by dissolving solute atoms into latticesof metal solvents at set ratios of the solute atoms to the metalsolvents. The elements from the solute and from the solvent are misciblein both liquid phase and solid phase, forming a uniform material. In oneembodiment, the tin-lead (SnPb) alloy includes such as 63% atomic ratioof tin and 37% atomic ratio of lead, and the melting point of the alloyis 183° C. In the embodiment, the first patterned metal layer 561 andthe second patterned metal layer 563 are heated at a temperature oflower than 230° C. and pressed at a pressure of lower than 2 MPa.However, the conditions of the heating treatment and the pressingtreatments performed to the patterned metal layers 561 and 563 may varydepending the actual applications and are not limited thereto, as longas the properties of the already-formed elements are not influenced(e.g. when the temperature is too high, the elements or the flexiblesubstrates may be damaged, or the layers may peel) and the metal layers561 and 563 can melt and form the metal enclosing wall 160 having acontinuous wall structure.

Next as described in the previous embodiments as shown in FIGS. 4D-4F,the IC component 310, the flexible cable 320, and the solder pad 330 aredisposed, the encapsulating glue 340 is formed, the first functionalfilm 350 is adhered, the rigid carrier 410 is removed, and the secondfunctional film 360 is adhered. As such, the organic light emittingdiode display device 400 as shown in FIG. 5D is formed.

While the disclosure has been described by way of example and in termsof the exemplary embodiment(s), it is to be understood that thedisclosure is not limited thereto. On the contrary, it is intended tocover various modifications and similar arrangements and procedures, andthe scope of the appended claims therefore should be accorded thebroadest interpretation so as to encompass all such modifications andsimilar arrangements and procedures.

What is claimed is:
 1. A display device, comprising: a first substrate,comprising a first region and a second region adjacent to the firstregion; a first barrier layer disposed on the first substrate; a secondsubstrate; a second barrier layer disposed on the second substrate; adisplay element disposed between the first barrier layer and the secondbarrier layer; a metal enclosing wall connecting the first substrate andthe second substrate, wherein the display element and the metalenclosing wall are disposed on the first region; and a flexible cabledisposed out of the metal enclosing wall and bonded on the secondregion.
 2. The display device of claim 1, further comprising amicrostructure disposed between the first substrate and the metalenclosing wall.
 3. The display device of claim 2, wherein themicrostructure has a roughened surface.
 4. The display device of claim2, wherein the microstructure has a plurality of pores, and a part ofthe metal enclosing wall is disposed in the pores of the microstructure.5. The display device of claim 2, wherein the microstructure prolongsthe penetration paths for water and oxygen.
 6. The display device ofclaim 2, wherein the microstructure is disposed between the firstbarrier layer and the metal enclosing wall.
 7. The display device ofclaim 6, wherein the microstructure has a roughened surface.
 8. Thedisplay device of claim 6, wherein the microstructure has a plurality ofpores, and a part of the metal enclosing wall is disposed in the poresof the microstructure.
 9. The display device of claim 6, wherein themicrostructure prolongs the penetration paths for water and oxygen. 10.The display device of claim 1, wherein the metal enclosing wall has afirst thermal expansion coefficient, the first barrier layer has asecond thermal expansion coefficient, and the first thermal expansioncoefficient is different from the second thermal expansion coefficient.11. The display device of claim 1, wherein the first substrate is atransparent substrate.
 12. The display device of claim 1, wherein theflexible cable is bonded on the second region with a solder pad.
 13. Thedisplay device of claim 1, wherein the IC component is bonded on thesecond region.